Updated on 2024/03/27

写真a

 
OTO Takao
 
Contact information
メールアドレス

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Nanotechnology/Materials / Nanostructural physics

  • Nanotechnology/Materials / Applied physical properties

Graduating School

  • Kyoto University, Faculty of Engineering

    2009.03, Graduated

Graduate School

  • Kyoto University, Graduate School, Division of Engineering

    Doctor's Course, 2014.03, Completed

External Career

  • , Special researcher of the Japan Society for the Promotion of Science, 2011.04 - 2014.03

 

Papers

  • Plasmonic red-light-emission enhancement by honeycomb-latticed InGaN/GaN ordered fine nanocolumn arrays, APPLIED PHYSICS EXPRESS, 16(11) , 2023.11

    Oto, T; Aihara, A; Motoyama, K; Ishizawa, S; Okamoto, K; Togashi, R; Kishino, K

    Single Author

  • Guanidium iodide treatment of size-controlled CsPbI3 quantum dots for stable crystal phase and highly efficient red LEDs, CHEMICAL ENGINEERING JOURNAL, 471 , 2023.09

    Hinako Ebe, Rikuo Suzuki, Shunsuke Sumikoshi, Mizuho Uwano, Reine Moriyama, Daisuke Yokota, Mahiro Otaki, Kazushi Enomoto, Takao Oto, Takayuki Chiba, Junji Kido

    Single Author

  • Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors, Micromachines, 14(2) 352, 2023.01

    Kiran Saba, Anna Kafar, Jacek Kacperski, Krzysztof Gibasiewicz, Dario Schiavon, Takao Oto, Szymon Grzanka, Piotr Perlin

    Single Author

  • Comparison of surface plasmon polariton characteristics of Ag- and Au-based InGaN/GaN nanocolumn plasmonic crystals, Appl. Phys. Express, 14(10) 105002, 2021.10

    Takao Oto, Masato Namazuta, Shotaro Hayakawa, Koichi Okamoto, Rie Togashi, Katsumi Kishino

    Single Author

  • Energy diagram and parameters regarding localized states in InGaN/GaN nanocolumns, J. Appl. Phys., 130 143106, 2021.10

    Naoki Shimosako, Kazuya Kinjo, Yuta Inose, Toshihiro Nakaoka, Takao Oto, Katsumi Kishino, Kazuhiro Ema

    Single Author

  • Photonic band characterization in InGaN/GaN nanocolumn arrays with triangular and honeycomb lattices by angle-resolved micro-photoluminescence measurements, JAPANESE JOURNAL OF APPLIED PHYSICS, 60(6) 060904, 2021.06

    Takao Oto, Masato Okamura, Yuzo Matsui, Kai Motoyama, Shunsuke Ishizawa, Rie Togashi, Katsumi Kishino

    Single Author

  • Carrier density dependence of localized carrier recombination dynamics in orange-emitting InGaN/GaN nanocolumns, J. Appl. Phys., 128(13) 133102, 2020.10

    Naoki Shimosako, Yuta Inose, Kazuya Kinjo, Toshihiro Nakaoka, Takao Oto, Katsumi Kishino, Kazuhiro Ema

    Single Author

  • Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display, Appl. Phys. Express, 13 014003, 2020.01

    Katsumi Kishino, Naoki Sakakibara, Kazuki Narita, Takao Oto

    Multiple Authorship (Only Japanese)

  • Nanocolumn LEDs for Monolithic Micro-LED Display, Proc. IDW 2018, 566-568, 2018.12

    Katsumi Kishino, Kazuki Narita, Ai Yanagihara, Takao Oto, and Rie Togashi

    Multiple Authorship (Only Japanese)

  • Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns, Phys. Status Solidi B, 255 1700481, 2018.05

    Takao Oto, Yutaro Mizuno, Jun Yoshida, Ai Yanagihara, Rin Miyagawa, Kazuhiro Ema, and Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • Emission color control for densely packed InGaN-based nanocolumns and demonstration of independent drive of multicolor (RGBY) micro-LED array, SPIE OPTO 2018 Proceedings, 10532 105321E, 2018.03

    K. Narita, N. Sakakibara, T. Oto, K. Kishino

    Multiple Authorship (Only Japanese)

  • Independent drive of integrated multicolor (RGBY) micro-LED array using regularly arrayed InGaN based nanocolumns, 22nd Microoptics Conference, MOC 2017, 2017- 108-109, 2018.01

    Naoki Sakakibara, Kazuki Narita, Takao Oto, Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • Enhancement of light emission and internal quantum efficiency in orange and red regions for regularly arrayed InGaN/GaN nanocolumns due to surface plasmon coupling, Appl. Phys. Lett., 111 133110, 2017.09

    Takao Oto, Kazuma Kikuchi, Koichi Okamoto, and Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective area growth, Appl. Phys. Express, 10 045001, 2017.03

    Takao Oto, Yutaro Mizuno, Ai Yanagihara, Kazuhiro Ema, and Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns, AIP Adv., 6 115214, 2016.11

    Takao Oto, Yutaro Mizuno, Ai Yanagihara, Rin Miyagawa, Tatsuya Kano, Jun Yoshida, Naoki Sakakibara, and Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • Spatial emission distribution and carrier recombination dynamics in regularly arrayed InGaN/GaN quantum structure nanocolumn, Jpn. J. Appl. Phys., 55 105001, 2016.09

    Takao Oto, Yutaro Mizuno, Rin Miyagawa, Tatsuya Kano, Jun Yoshida, Kazuhiro Ema, and Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • Systematic investigation of critical column diameter for InGaN on GaN nanocolumns by selective area growth, Proc. 24th Int. Symp. “Nanostructures: Physics and Technology”, 2016.06

    Takao Oto, Yutaro Mizuno, Ai Yanagihara, Rin Miyagawa, Tatsuya Kano, Jun Yoshida, Naoki Sakakibara, and Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • GaN nanocolumn arrays with diameter < 30 nm prepared by two-step selective area growth, Electron. Lett., 51 2125, 2015.12

    Tatsuya Kano, Jun Yoshida, Rin Miyagawa, Yutaro Mizuno, Takao Oto, and Katsumi Kishino

    Multiple Authorship (Only Japanese)

  • Design and optimization of InGaN superluminescenct diodes, Phys. Status Solidi A, 212 997, 2015.11

    Anna Kafar, Szymon Starnczyk, Prezemek Wisniewski, Takao Oto, Irina Makarowa, Grzegorz Targowski, Tadeusz Suski, and Piotr Perlin

    Multiple Authorship (Including Foreigners)

  • Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film, J. Appl. Phys., 118 175702, 2015.11

    Naoki Shimosako, Yuta Inose, Hikaru Sato, Kazuya Kinjo, Toshihiro Nakaoka, Takao Oto, Katsumi Kishino, and Kazuhiro Ema

    Multiple Authorship (Only Japanese)

  • Co-existence of a few and sub mm inhomogeneities in Al-rich AlGaN/AlN quantum wells, J. Appl. Phys., 117 115702, 2015.03

    Yoshiya Iwata, Takao Oto, David Gachet, Ryan G. Banal, Mitsuru Funato, and Yoichi Kawakami

    Multiple Authorship (Including Foreigners)

  • Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates, J. Cryst. Growth, 425 316, 2015.02

    Koji Yamano, Katsumi Kishino, Hiroto Sekiguchi, Takao Oto, Akihiro Wakahara, and Yoichi Kawakami

    Multiple Authorship (Only Japanese)

  • Optical gain characteristics in Al-rich AlGaN/AlN quantum wells, Appl. Phys. Lett., 104 181102, 2014.05

    Takao Oto, Ryan G. Banal, Mitsuru Funato, and Yoichi Kawakami

    Multiple Authorship (Only Japanese)

  • High-optical-power InGaN superluminescenct diodes with “j-shape” waveguide, Appl. Phys. Express, 6 092102, 2013.08

    Anna Kafar, Szymon Starnczyk, Grzegorz Targowski, Takao Oto, Irina Makarowa, Prezemek Wisniewski, Tadeusz Suski, and Piotr Perlin

    Multiple Authorship (Including Foreigners)

  • Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum well under selective excitation, Phys. Status Solidi C, 8 2191, 2011.06

    Yoshiya Iwata, Takao Oto, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, and Yoichi Kawakami

    Multiple Authorship (Only Japanese)

  • 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam, Nature Photonics, 4 767, 2010.09

    Takao Oto, Ryan G. Banal, Ken Kataoka, Mitsuru Funato, and Yoichi Kawakami

    Multiple Authorship (Only Japanese)

  • Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells, Phys. Status Solidi C, 7 1909, 2010.06

    Takao Oto, Ryan G. Banal, Mitsuru Funato, and Yoichi Kawakami

    Multiple Authorship (Only Japanese)

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Industrial Property

  • Patent, Ultraviolet Irradiation Apparatus (Europe), Yoichi Kawakami, Mitsuru Funato, Takao Oto, Ryan G. Banal, Masanori Yamaguchi, Ken Kataoka, Hiroshige Hata

    Registration number ( 特許2579295 ) ,

  • Patent, Ultraviolet Irradiation Apparatus (USA), Yoichi Kawakami, Mitsuru Funato, Takao Oto, Ryan G. Banal, Masanori Yamaguchi, Ken Kataoka, Hiroshige Hata

    Registration number ( 特許US 2013/0075697 A1 ) , United States

  • Patent, Ultraviolet Irradiation Apparatus (Taiwan), Yoichi Kawakami, Mitsuru Funato, Takao Oto, Ryan G. Banal, Masanori Yamaguchi, Ken Kataoka, Hiroshige Hata

    Registration number ( 特許I 407593 ) , Taiwan, Province of China

Grant-in-Aid for Scientific Research

  • Grant-in-Aid for Scientific Research(C),2023.04 - 2026.03

  • Grant-in-Aid for Young Scientists,2021.04 - 2023.03

  • Grant-in-Aid for New academic field research(Research areas proposal),2019.04 - 2021.03

  • Grant-in-Aid for Scientific Research(A),2019.04 - 2021.03

  • Grant-in-Aid for Young Scientists(B),2017.04 - 2020.03

  • Grant-in-Aid for JSPS Fellows,2011.04 - 2014.03

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Presentations

  • The 14th International Conference on Nitride Semiconductors (ICNS-14), International presentation, 2023.11 - 2923.11, Significant emission enhancement from InGaN/GaN nanocolumn arrays owing to strong coupling between photonic and plasmonic band states, Oral presentation (general)

  • Twentieth International Conference on Flow Dynamics, International presentation, 2023.11, Electron Dynamics Evaluation in Different Temperature Using Au/TiO2 and Au/SiO2 Nano Particles Dispersion, Poster presentation

  • 22nd European Conference on Thermophysical Proerties (ECTP), Domestic presentation, 2023.09, Transient absorption spectroscopy for evaluation of photothermal conversion in heterostructured nanoparticles, Poster presentation

  • REI-21, International presentation, 2023.09, Near-Infrared Photoluminescence of Neodymium Implanted Gallium Nitride Coupled to Photonic Crystal L3 Cavity, Poster presentation

  • The 32nd Annual Meeting of MRS-J, International presentation, 2022.12, Lanthanoid Implanted GaN with Enhanced Photon Emission for Nanophotonic Applications, Oral presentation (invited, special)

  • Defects in solids for quantum technologies, International presentation, 2022.06, Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity, Oral presentation (general)

  • The 9th Asia-Pacific Workshop on Widegap Semiconductors, International presentation, 2019.11, Red emission enhancement from InGaN using nanocolumn plasmonic crystals with honeycomb and kagome lattices, Oral presentation (general)

  • The 9th Asia-Pacific Workshop on Widegap Semiconductors, International presentation, 2019.11, Red Emitting InGaN-based Ordered Nanocolumns Exhibiting Photonic Crystal Effects at 671 nm, Oral presentation (general)

  • The 9th Asia-Pacific Workshop on Widegap Semiconductors, International presentation, 2019.11, Surface Plasmon Coupling around Lateral Interface toward InGaN Nanocolumn Based Plasmonic LEDs with High Efficiencies, Poster presentation

  • 13th International Conference on Nitride Semiconductors, Domestic presentation, 2019.07, III-N Nanocolumn Visible LEDs, Oral presentation (invited, special)

  • The 25th International Display Workshops, International presentation, 2018.12, Nanocolumn LEDs for Monolithic Micro-LED Display, Oral presentation (invited, special)

  • International Workshop on Nitride Semiconductors 2018, International presentation, 2018.11, Coupling of Photonic and Plasmonic Band States in InGaN/GaN Nanocolumn Plasmonic Crystals, Oral presentation (general)

  • 34th International Conference on the Physics of Semiconductors, International presentation, 2018.07, Enhanced Orange and Red Emissions by InGaN/GaN Nanocolumn Plasmonic Crystals, Oral presentation (general)

  • SPIE Photonics West OPTO 2018, International presentation, 2018.01, Emission color control for densely packed InGaN-based nanocolumns and demonstration of independent drive of multicolor (RGBY) micro-LED array, Oral presentation (general)

  • 22nd Microoptics Conference, International presentation, 2017.11, Independent drive of integrated multicolor (RGBY) micro-LED array using regularly arrayed InGaN based nanocolumns, Oral presentation (general)

  • The 11th International Symposium on Semiconductor Light Emitting Devices, International presentation, 2017.10, Optical properties in InGaN/AlGaN quantum wells on GaN nanocolumns fabricated by selective area growth, Oral presentation (general)

  • The 11th International Symposium on Semiconductor Light Emitting Devices, International presentation, 2017.10, InGaN/(Al)GaN-based nanocolumn (NC) arrays and their light-emitter applications, Oral presentation (invited, special)

  • EMN Meeting on Epitaxy 2017, International presentation, 2017.09, Structural and optical properties in InGaN/GaN nanocolumns fabricated by selective-area growth, Oral presentation (invited, special)

  • The 8th Asia-Pacific Workshop on Widegap Semiconductors, International presentation, 2017.09, Enhanced light emission intensity from regularly arrayed InGaN/GaN nanocolumns due to surface plasmon coupling, Oral presentation (general)

  • Frontiers in Materials Processing Applications, Research and Technology, Domestic presentation, 2017.07, Regularly arranged AlGaN/InGaN nanocolumns for visible-emitting devices, Oral presentation (general)

  • 12th International Conference on Nitride Semiconductors, International presentation, 2017.07, Structural and optical properties in InGaN/GaN single quantum wells on GaN nanocolumns, Poster presentation

  • Workshop on Frontier Photonic and Electronics Materials and Devices, International presentation, 2017.03, Regularly arranged InGaN Nanocolumns (NCs) for Visible-Light Nanocolumn Emitters, Oral presentation (invited, special)

  • International Workshop on Nitride Semiconductors 2016, International presentation, 2016.10, Systematic Investigation of Influence of Nanostructural Effect on Optical Properties in InGaN Nanocolumns, Oral presentation (general)

  • International Workshop on Nitride Semiconductors 2016, International presentation, 2016.10, Closely-packed two-dimensional arrangement of microscopic area (10x10m2) InGaN-based nanocolumn LEDs with different emission colors, Oral presentation (general)

  • 19th International Conference on Molecular-Beam Epitaxy, International presentation, 2016.09, Selective Area Growth of Regularly Arrayed AlGaN Nanocolumns, Oral presentation (general)

  • 33rd International Conference on the Physics of Semiconductors, International presentation, 2016.07, Analysis of Localized States in InGaN/GaN Regularly Arranged Nanocolumns, Poster presentation

  • 2016 Photonics West, International presentation, 2016, InGaN-based orderly-arranged-nanocolumn light-emitters, Oral presentation (invited, special)

  • European Material Research Symposium, International presentation, 2015, Temperature dependence of double-peak emission in regularly arrayed InGaN-based nanocolumns, Poster presentation

  • The 6th International Symposium on Growth of III-Nitrides, International presentation, 2015, Column diameter dependence of carrier recombination characteristics in regularly arrayed InGaN/GaN nanocolumns, Poster presentation

  • 5th Internal Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, International presentation, 2015, InGaN-based visible light nanocolumn LEDs with regularly arranged nanocolumns, Oral presentation (invited, special)

  • 11th International Conference On Nitride Semiconductors, International presentation, 2015, InGaN-Based Nanocolumn Emitter Technology Based on Uniform Arrays of Nanocolumn, Oral presentation (invited, special)

  • The 7th Asia-Pacific Workshop on Widegap Semiconductors, International presentation, 2015, Column diameter dependence of emission mechanisms in InGaN/GaN single quantum wells nanocolumns, Oral presentation (general)

  • Applied Nanotechnology and Nanoscience International Conference, International presentation, 2015, Structural Dependence of Light Extraction Efficiency in Nanocolumn Arrays, Poster presentation

  • Applied Nanotechnology and Nanoscience International Conference, International presentation, 2015, Localized Carrier Dynamics in Regularly-arrayed InGaN/GaN nanocolumns, Poster presentation

  • Applied Nanotechnology and Nanoscience International Conference, International presentation, 2015, Diameter Dependence of Optical Properties in Regularly-arrayed GaN nanocolumns, Poster presentation

  • International Workshop on Nitride Semiconductors 2014, International presentation, 2014, Optical Gain Characteristics in Al-rich AlGaN/AlN Quantum Wells, Oral presentation (general)

  • 10th International symposium on Semiconductor Light Emitting Devices, International presentation, 2014, Column-Diameter Dependency of Emission Properties in InGaN-based Nanocolumns, Oral presentation (general)

  • 10th International symposium on Semiconductor Light Emitting Devices, Domestic presentation, 2014, In-plane Emission Distribution and Carrier Dynamics in InGaN-based Nanocolumns, Oral presentation (general)

  • 10th International symposium on Semiconductor Light Emitting Devices, International presentation, 2014, Progress on InGaN-based Orderly Arrayed Nanocolumn Technology, Oral presentation (invited, special)

  • 2014 Material Research Society Fall Meeting, International presentation, 2014, Thinning of Regularly Arranged InGaN/GaN Nanocolumns - Realization of Nanocolumns with a Diameter as Narrow as 30 nm, Oral presentation (general)

  • 18th International Conference on Molecular Beam Epitaxy, International presentation, 2014, Regularly Arranged AlGaN Nanocolumn Growth on Nanocolumn Templates, Oral presentation (general)

  • International Workshop on Nitride Semiconductors 2014, International presentation, 2014, Co-existence of a few and sub μm inhomogeneity in Al-rich AlGaN/AlN quantum well, Oral presentation (general)

  • International Workshop on Nitride Semiconductors 2014, International presentation, 2014, Exciton Dynamics in Al-rich AlGaN/AlN Quantum Wells Assessed by Temperature-dependent Cathodoluminescence Mapping Measurements, Poster presentation

  • 10th International Conference on Nitride Semiconductors, International presentation, 2013, Origin of Exciton Localization in Al-rich AlGaN/AlN Quantum Wells, Poster presentation

  • International Workshop on Nitride Semiconductors 2012, International presentation, 2012, Exciton Localization Phenomena in Al-rich AlGaN/AlN Quantum Wells, Poster presentation

  • 9th International Conference on Nitride Semiconductors, International presentation, 2011, High Power and High Efficiency Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells Pumped by An Electron Beam, Oral presentation (general)

  • 9th International Conference on Nitride Semiconductors, International presentation, 2011, Well width dependence of the Mott density in Al-rich AlGaN/AlN quantum wells assessed by time-resolved photoluminescence, Oral presentation (general)

  • International Workshop on Nitride Semiconductors 2010, International presentation, 2010, Time-resolved Photoluminescence of Al-rich AlGaN/AlN Multiple Quantum Wells under Selective Excitation, Poster presentation

  • 8th International Conference on Nitride Semiconductors, International presentation, 2009, Deep Ultraviolet Emission Mechanisms in highly excited Al0.79Ga0.21N/AlN Multiple Quantum Wells, Poster presentation

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