Updated on 2019/05/21

写真a

 
MATSUSHITA Koichi
 
Title
Professor(Moving Out or Retirement)
Date of Birth
1953
Contact information
メールアドレス
Laboratory Phone number
+81-238-26-3281
　
Laboratory Fax number
+81-238-26-3299
　

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Nanotechnology/Materials / Applied condensed matter physics

Graduating School

  • Tohoku University, Faculty of Engineering, Department of Electronic Engineering

    1976.03, Graduated

Graduate School

  • Tohoku University, Graduate School, Division of Engineering

    Master's Course, 1978.03, Completed

External Career

  • , Research Assistant, 1978.04 - 1986.11

 

Research Career

  • Study on low temperature epitaxial growth of semiconductors, 1978.04 - 2005.03

    low temperature epitaxy,semiconductor,Plasma

  • Study on the surface energy of semiconductors, 1986.12 -

    Surface energy,semiconductor,contact angle

  • Study on micromachine, 1990.04 -

    micromachine

Papers

  • Homoepitaxial growth of ZnO films on ZnO(112~0) substrates, Applied Surface Science, 244 373-376, 2005.01

    Y.Kashiwaba, H.Kato, T.Kikuchi, I.Niikura, K.Matsushita, and Y.Kashiwaba

    Multiple Authorship (Including Foreigners)

  • Properties of ZnO films prepared by MO-CVD under oxygen rich condition on sapphire substrate, physica status solidi (c) 1, ( 4) 912-915, 2004.02

    Y.Kashiwaba, K.Haga, H.Watanabe, B.P.Zhang, Y.Segawa, and K.Matsushita

    Multiple Authorship (Including Foreigners)

  • Three-ports Micro ER Valve for ER Suspension Fabricated by Photolithography, J.Intelligent Material Systems and Structures, 13 503-508, 2002.08

    M.Nakano, T.Katou, A.Satou, K.Miyata, K.Matsusita

    Multiple Authorship (Including Foreigners)

  • In-Situ Observation of GaAs Surface in High Vacuum by Contact AngleMeasurement, Electronics and Communications in Japan, Part2, 84(11) 51-59, 2001.11

    K.Matsushita, T.Monbara, K.Nakayama, H.Naganuma, S.Okuyama and K.Okuyama

    Multiple Authorship (Including Foreigners)

  • Characterization of Pure Water-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets, J.Electrochem.Soc., 148(8) G401-G405, 2001.08

    K.Matsushita, A.Fujisawa, N.Ando, H.Kobayashi, H.Naganuma, S.Okuyama and K.Okuyama

    Multiple Authorship (Including Foreigners)

  • "In-situ" observation of GaAs surface in high vacuum by contact angle measurement, J84-C(.2) 136-143, 2001.02

    K. Matsushita, T. Monbara, K. Nakayama, H. Naganuma, S. Okuyama and K. Okuyama

    Multiple Authorship (Only Japanese)

  • Hydrogen Gas Sensing Using a Pd-Coated Cantilever, Jpn. J. Appl. Phys., 39(6A) 3584-3590, 2000.06

    S.Okuyama, Y.Mitobe, K.Okuyama and K.Matsushita

    Multiple Authorship (Including Foreigners)

  • Hydrophobicity of Hydrochloric-Treated GaAs Surface Analyzed by Contact Angle Measurement, J.Electrochem.Soc., 145(4) 1381-1384, 1998.04

    K.Matsushita, N.Suzuki, S.Okuyama and K.Okuyama

    Multiple Authorship (Including Foreigners)

  • Hydrogen-induced light emission from an organic electroluminescent device, Appl.Phys.Lett., 71(20) 2877-2879, 1997.11

    S.Okuyama, Y.Ito, T.Sugawara, K.Okuyama, K.Matsushita and J.Kido

    Multiple Authorship (Including Foreigners)

  • Improved Response Time of Al/Al2O3-Pd Tunnel Diode Hydrogen Gas Sensor, Jpn.J.Appl.Phys., 36(11) 6905-6908, 1997.11

    S.Okuyama, H.Usami, K.Okuyama, H.Yamada and K.Matsushita

    Multiple Authorship (Including Foreigners)

  • Pd/Ni-Al2O3-Al Tunnel Diode as High-Concentration-Hydrogen Gas Sensor, Jpn.J.Appl.Phys., 36(3A) 1228-1232, 1997.03

    S.Okuyama, K.Umemoto, K.Okuyama, S.Ohshima and K.Matsushita

    Multiple Authorship (Including Foreigners)

  • Hydrofluoric-Treated GaAs Surfaces Analyzed by Contact Angle Measurement and Auger Electron Spectroscopy, Jpn.J.Appl.Phys., 35(10) 5293-5296, 1996.10

    K.Matsushita, N.Suzuki, S.Okuyama and Y.Kumagai

    Multiple Authorship (Including Foreigners)

  • Current vs Voltage Characteristics of Al-Al2O3-Pd Tunnel Junction Hydrogen Sensor, Jpn.J.Appl.Phys., 35(4A) 2266-2270, 1996.04

    S.Okuyama, K.Okuyama, N.Takinami, K.Matsushita and Y.Kumagai

    Multiple Authorship (Including Foreigners)

  • Electrochemical Intercalation of Organic Molecules into Layered Oxides, MoO3, Materials Research Bulletin, 31(3,) 283-294, 1996.03

    K.Ara, H.Tagaya, T.Ogata, K.Matsushita, J.Kadokawa, M.Karasu and K.Chiba

    Multiple Authorship (Including Foreigners)

  • Positive-working alkaline-developable photosensitive polyimide precursor based on polyisoimide using diazonaphthoquinone as a dissolution inhibitor, Polymer, 36 2153-2158, 1995.06

    A.Mochizuki, T.Teranishi, M.Ueda and K.Matsushita

    Multiple Authorship (Including Foreigners)

  • Positive-working photosensitive polyimide precursor based on polyisoimide using nifedipine as a dissolution inhibitor, High Perform. Polym., 6 225-233, 1994.12

    A.Mochizuki, K.Yamada, T.Teranishi, K.Matsushita and M.Ueda

    Multiple Authorship (Including Foreigners)

  • Observation of HCl-and HF-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets, Jpn.J.Appl.Phys., 33(8) 4576-4580, 1994.08

    K.Matsushita, S.Miyazaki, S.Okuyama and Y.Kumagai

    Multiple Authorship (Including Foreigners)

  • Electrochemical Intercalation of Organic Molecules into Thin Film of Layered Oxide MoO<sub>3</sub>, Chemistry Letters, 2439-2442, 1994.04

    H. Tagaya, K. Ara, T. Ogata, K. Matsushita, J. Kadokawa, M. Karasu, K. Chiba

    Multiple Authorship (Including Foreigners)

  • Electrochemical Detection of Defects in Ge/GaAs Structures by an Anodic Dissolution Method under Illumination, J. Electrochem. Soc., 140(7) 2097-2100, 1993.07

    K.Matsushita, R.Chiba, S.Okuyama and Y.Kumagai

    Multiple Authorship (Including Foreigners)

  • Suppression of InP Substrate Degradation by Hydrogen Plasma Caused by the Presence of Phosphorus Vapour, Electronics Lett., 26(9) 564-566, 1990.04

    R.Schuetz, K.Matsushita, H.L.Hartnagel, J.Y.Longere, S.K.Krawczyk

    Multiple Authorship (Including Foreigners)

  • Plasma-Assisted Epitaxial Growth of InAs, Appl.Phys.Lett., 54(14) 1338-1340, 1989.04

    S.F.Fang, K.Matsushita and T.Hariu

    Multiple Authorship (Including Foreigners)

  • Low Temperature Epitaxial Growth of Highly-Conductive ZnSe Layers in Mixed Plasma of Hydrogen and Hydrogen Chloride, Jpn.J.Appl.Phys., 26(6) L893-L895, 1987.06

    S.Yamauchi, T.Hariu and K.Matsushita

    Multiple Authorship (Including Foreigners)

  • Quenching and Recovery Spectra of Midgap Levels (EL2) in Semi.Insulating GaAs Measured by Double-Beam Photoconductivity, J.Appl.Phys., 61(3) 1068-1072, 1987.02

    T.Hariu, T.Sato, H.Komori and K.Matsushita

    Multiple Authorship (Including Foreigners)

  • Plasma-Assisted Deposition and Epitaxy of ZnSe, Vacuum, 36(1) 133-137, 1986.01

    H.Sato, O.Osada,K.Matsushita,T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Photoluminescent Determination of Mn Concentration and its Diffusion in Semi-Insulating GaAs, J.Appl.Phys., 57(4) 1109-1113, 1985.02

    Y.Sasaki, T.Sato, K.Matsushita, T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Plasma-Assisted Epitaxial Growth of GaAs and GaSb Layers in Hydrogen Plasma, IEEE Trans. on ED, 31(8) 1092-1096, 1984.08

    K.Matsushita, T.Sato, Y.Sato, Y.Sugiyama, T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Low Temperature and High Deposition Rate Epitaxial Growth of Compound Semiconductors by Plasma-Assisted Epitaxy, 27(7) 569-580, 1984.07

    Multiple Authorship (Only Japanese)

  • Plasma-Assisted Epitaxial Growth of GaSb in Hydrogen Plasma, Appl.Phys.Lett., 44(6) 592-594, 1984.03

    Y.Sato, K.Matsushita, T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Plasma-Assisted Epitaxial Growth of GaSb in Hydrogen Plasma, Proc. ISIAT'83 & IPAT'83, Kyoto, 1103-1107, 1983.09

    Y.Sato, K.Matsushita, T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy, Jpn.J.Appl.Phys., 22(9) L602-L604, 1983.09

    K.Matsushita, Y.Sugiyama, S.Igarashi, T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • A Comparative Study of the Deposition Conditions in the Plasma Assisted Deposition of Gallium Nitride Thin Films, Thin Solid Films, 80 243-247, 1981.07

    K.Matsushita, Y.Matsuno, T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Low Temperature Thermal Nitridation of GaAs Surfaces, Jpn.J.Appl.Phys, 19(7) L383-L385, 1980.07

    Y.Matsuno, K.Matsushita, T.Hariu and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Some Aspects on the Mechanism of Anodic Oxidation of GaAs, J.Electrochem.Soc., 126(7) 1268-1272, 1979.07

    K.Matsushita, T.Hariu, H.Adachi and Y.Shibata

    Multiple Authorship (Including Foreigners)

  • Gallium Oxide Film by Anodic Oxidization of Gallium, Jpn.J.Appl.Phys.,, 16(8) 1459-1460, 1977.04

    松下　浩一

    Multiple Authorship (Including Foreigners)

  • New Etch Pits on GaAs Revealed by Etching after Anodic Oxidation, J.Appl.Phys.,, 48(4) 1722-1723, 1977.04

    松下　浩一

    Multiple Authorship (Including Foreigners)

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Books

  • Properties of Indium Phosphide, An Inspec publication, 1991.04

    S.Adachi, ・・・, K. Matsushita

Grant-in-Aid for Scientific Research

  • Grant-in-Aid for Scientific Research(B)，2003.04 - 2006.03

  • Grant-in-Aid for Scientific Research(B)，1999.04 - 2002.03

  • Grant-in-Aid for Scientific Research(B)，1996.04 - 1999.03

Preferred joint research theme

  • Study on micromachine, Cooperative Research with Industry-University research organizations and private agencies, Cooperative Research

  • Study on the surface energy of semiconductors, Cooperative Research with Industry-University research organizations and private agencies, Cooperative Research