Updated on 2024/11/29

写真a

 
NARITA Yuzuru
 
Title
Professor
Date of Birth
1976

Research Areas

  • Nanotechnology/Materials / Applied physical properties

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Nanotechnology/Materials / Composite materials and interfaces

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Nanotechnology/Materials / Crystal engineering

  • Nanotechnology/Materials / Applied condensed matter physics

  • Nanotechnology/Materials / Nanomaterials

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Graduating School

  • Nagaoka University of Technology, Faculty of Engineering

    1999.03, Graduated

Graduate School

  • Nagaoka University of Technology, Graduate School, Division of Engineering

    Doctor's Course, 2004.03, Completed

External Career

  • , Part-time researcher for university or other academic organization, 2004.04 - 2006.02

  • , Part-time researcher for university or other academic organization, 2006.03 - 2008.02

  • Yamagata University, Assistant Professor, 2008.03 - 2018.03

  • Yamagata University, Associate Professor, 2018.04 -

Academic Society Affiliations

  • THE JAPAN SOCIETY OF APPLIED PHYSICS

  • The Vacuum Society of Japan

 

Papers

  • Design and fabrication of microwave transmitting antenna using HTS thick disk for wireless power transfer, Journal of Physics: Conference Series, 2323 012031, 2022

    A Saito, F Shimada, T Sato, K Kiyooka, M Shibata, S Ono, M Takeda, Y Narita, K Nakajima

    Multiple Authorship (Only Japanese)

  • Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm, Japanese Journal of Applied Physics, 56(8) 0802B3-1-0802B3-5, 2017.06

    Yuzuru Narita, Yutaka Takahashi, Masahide Harada, Kenichi Oikawa, Daisuke Kobayashi, Kazuyuki Hirose, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno

    Multiple Authorship (Including Foreigners)

  • Effect of Introduction of Artificial Pinning Center in YBa2Cu3Oy Thin Films to Reduce Surface Resistance, IEEE Transactions on Applied Superconductivity, 27(4) 1-4, 2017.06

    Naoki Takanashi, Masaya Kondo, Hiroaki Matsui, Yuzuru Narita, Atsushi Saito, Kensuke Nakajima, Shigetoshi Ohshima

    Multiple Authorship (Including Foreigners)

  • Kinetics of hydrogen adsorption and desorption on Si(100) surfaces, Journal of Applied Physics, 113(23) 234309, 2013.06

    Yuzuru Narita, Shoji Inanaga, Akira Namiki

    Multiple Authorship (Including Foreigners)

  • Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometalic Compounds, 33(7) 376-381, 2012.07

    Multiple Authorship (Only Japanese)

  • Diffusion-promoted-desorption mechanism for D2 desorption from Si(100) surfaces , Surface Science, 605 32-39, 2011.01

    Y. Narita, S. Inanaga, C. Unoko, A. Namiki

    Multiple Authorship (Including Foreigners)

  • Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment, Thin Solid Films, 519 270-275, 2010.08

    F. Hirose, Y. Kinoshita, S. Shibuya, Y. Narita, Y. Takahashi, H. Miya, K. Hirahara, M. Niwano

    Multiple Authorship (Including Foreigners)

  • Mechanical and Tribological Properties of Boron, Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Reactive Radio-Frequency Magnetron Sputtering, Diamond & Related Materials, 19 503-506, 2010.01

    H. Nakazawa, A. Sudoh, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

    Multiple Authorship (Including Foreigners)

  • Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education, IEICE Transactions on Electronics, E93-C(1) 108-111, 2010.01

    F. Hirose, T. Miyagi, Y. Narita

    Multiple Authorship (Including Foreigners)

  • Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition, Japanese Journal of Applied Physics, (48) 116002-1-16002-8, 2009.11

    H. Nakazawa, T. Kinoshita, Y. Kaimori, Y. Asai, M. Suemitsu, T. Abe, K. Yasui, T. Endoh, T. Itoh, Y. Narita, Y. Enta, M. Mashita

    Multiple Authorship (Including Foreigners)

  • In Situ Observation of N719 on TiO2 in Dye-Sensitized Solar Cells by IR Absorption Spectroscopy, Electrochemical and Solid-State Letters, 12(12) B167-B170, 2009.10

    F. Hirose, K. Kuribayashi, M. Shikaku, Y. Narita

    Multiple Authorship (Including Foreigners)

  • Time-of-flight distributions of HD molecules abstracted at a Si(100) surface, Surface Science, 603 2607-2611, 2009.08

    S. Sato, Y. Narita, A.R. Khan, A. Namiki

    Multiple Authorship (Including Foreigners)

  • Epitaxial growth of GaN films by pulse-mode hot-mesh chemical vapor deposition, Japanese Journal of Applied Physics, 48 076509-076513, 2009.07

    Y. Komae, K. Yasui, M. Suemitsu, T. Endoh, T. Ito, H. Nakazawa, Y. Narita, M. Takata, T. Akahane

    Multiple Authorship (Including Foreigners)

  • Adsorption density control of N719 on TiO2 electrodes for highly efficient dye sensitized solar cells, Journal of Electrochemical Society, 156(9) B987-B990, 2009.06

    F. Hirose, K. Kuribayashi, M. Shikaku, Y. Narita, Y. Takahashi, Y. Kimura, M. Niwano

    Multiple Authorship (Including Foreigners)

  • Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate, e-Journal of Surface Science and Nanotechnology, (7) 107-109, 2009.02

    Y. Miyamoto, H. Handa, E. Saito, A. Konno, Y. Narita, M. Suemitsu, H. Fukidome, T. Ito, K. Yasui, H. Nakazawa, T. Endoh

    Multiple Authorship (Including Foreigners)

  • Substantially low desorption barriers in recombinative desorption of deuterium from the Si(100) surface, Surface Science, 603 1168-1174, 2009.02

    Y. Narita, Y. Kihara, S. Inanaga, and A. Namiki

    Multiple Authorship (Including Foreigners)

  • The growth of GaN films by alternate source gas supply hot-mesh CVD method, Thin Solid Films, 517 3528-3531, 2009.01

    Yasuaki Komae, Takeshi Saitou, Maki Suemitsu, Takashi Ito, Tetsuo Endoh, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane, Kanji Yasui

    Multiple Authorship (Including Foreigners)

  • Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source, Japanease Journal of Applied Physics, 47 8491-8497, 2008.11

    Hideki NAKAZAWA, Yuhki ASAI, Takeshi KINOSHITA, Maki SUEMITSU, Toshimi ABE, Kanji YASUI, Takashi ITOH, Tetsuo ENDOH, Yuzuru NARITA, Atsushi KONNO, Yoshiharu ENTA, and Masao MASHITA

    Multiple Authorship (Including Foreigners)

  • Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition, Diamond & Related Materials, 18 831-834, 2008.11

    H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

    Multiple Authorship (Including Foreigners)

  • Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopy, Thin Solid Films, 517 209-212, 2008.08

    Yuzuru Narita, Fumihiko Hirose, Masaya Nagato, Yuta Kinoshita

    Multiple Authorship (Including Foreigners)

  • UV treatment effect on TiO2 electrodes in dye sensitized solar cells with N719 sensitizer, Electrochemical and Solid-State Letters, 11(7) A109-A111, 2008.04

    F. Hirose, K. Kuribayashi, T. Suzuki, Y. Narita, Y. Kimura, M. Niwano

    Multiple Authorship (Including Foreigners)

  • Adsorption and abstraction of atomic hydrogen on the Si(110) surfaces, Surface Science, 602 1979-1986, 2008.04

    A.R. Khan, Y. Narita, A. Namiki, A. Kato, M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • “Temperature Oscillation” as a Real-Time Monitoring of the Growth of 3C-SiC on Si Substrate, Applied Surface Science, 254 6235-6237, 2008.03

    E. Saito, A. Konno, T. Ito, K. Yasui, H. Nakazawa, T. Endoh, Y. Narita, M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • Scattering of 300 K D2 effusive beams from the H/Si(100) surface, Surface Science, 602 1585-1588, 2008.03

    S. Ueno, Y. Narita, A. R. Khan, Y. Kihara, A. Namiki

    Multiple Authorship (Including Foreigners)

  • Growth of GaN Films by Hot-Mesh Chemical Vapor Deposition Using Ruthenium Coated Tungsten Mesh, Japanese Journal of Applied Physics, 47 573-576, 2008.01

    Y. Fukada, K. Yasui, Y. Kuroki, M. Suemitsu, T. Ito, T. Endou, H. Nakazawa, Y. Narita, M. Takata and T. Akahane

    Multiple Authorship (Including Foreigners)

  • Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD, Thin Solid Films, 516 659-662, 2007.08

    K. Tamura, Y. Kuroki, K. Yasui, M. Suemitsu, T. Ito, T. Endou, H. Nakazawa, Y. Narita, M. Takata and T. Akahane

    Multiple Authorship (Including Foreigners)

  • Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surface by O1s Photoemission Spectroscopy Using Synchrotron Radiation, Japanese Journal of Applied Physics, 46 1888-1890, 2007.04

    M. Suemitsu, A. Kato, H. Togashi, A. Konno, Y. Yamamoto, Y. Teraoka, A. Yoshigoe, Y. Narita, Y. Enta

    Multiple Authorship (Including Foreigners)

  • Initial Oxidation of HF-acid-treated Si(100) surfaces under air exposure studied by synchrotron radiation X-ray photoelectron spectroscopy, Surface Science, 601 2302-2306, 2007.03

    F. Hirose, M. Nagato, Y. Kinoshita, Y. Narita, M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • Transient desorption of HD and D2 molecules from the D/Si(100) surfaces exposed to a modulated H-beam, Surface Science, 601 1635-1641, 2007.02

    A.R. Khan, A. Takeo, S. Ueno, S. Inanaga, T. Yamauchi, Y. Narita, H. Tsurumaki, A. Namiki

    Multiple Authorship (Including Foreigners)

  • Hydrogen-controlled crystallinity of 3C-SiC film on Si(001) grown with monomethylsilane, Japanese Journal of Applied Physics, 46(2) L40-L42, 2007.01

    Y. Nartita, A. Konno, H. Nakazawa, M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • ZnO growth on 3C-SiC, Journal of the Korean Physical Society, 49 903, 2006.12

    T. Minegishi, Y. Nartita, S. Tokairin, G. Fujimoto, H. Suzuki, Z. Vashaei, K. Sumitani, O. Sakata, M. Cho, T. Yao, M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surface by Photoemission Spectroscopy, ECS Transations, 3 311-316, 2006.12

    M. Suemitsu, A. Kato, H. Togashi, A. Konno, Y. Yamamoto, Y. Teraoka, A. Yoshigoe, Y. Enta, Y. Narita

    Multiple Authorship (Including Foreigners)

  • Heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane, ECS Transations, 3 449-455, 2006.12

    A. Konno, Y. Narita, T. Ito, K. Yasui, H. Nakazawa, T. Endoh, M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • Suppression of Atomic Exchange between Ge and Si during Germane Adsorption on Si(001) Using Atomically Flat Surface, Thin Solid Films, 508 166-168, 2005.11

    Y. Narita, T. Murata, M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • Ge Dot formation using Germane on a Monomethylsilane-Adsorbed Si(001)-2x1 Surface, Thin Solid Films, 508 200-202, 2005.11

    Y. Narita, T. Murata, A. Kato, T. Endoh and M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane, Applied Surface Science, 252 3460-3465, 2005.06

    Y. Narita, M. Harashima, K. Yasui, T. Akahane and M. Takata

    Multiple Authorship (Including Foreigners)

  • (100)-oriented 3C-SiC polycrystalline film grown on SiO2 by hot-mesh chemical vapor deposition using monomethylsilane and hydrogen, Japanese Journal of Applied Physics, 44 L809-L811, 2005.06

    Y. Narita, K. Yasui, J. Eto, T. Kurimoto and T. Akahane

    Multiple Authorship (Including Foreigners)

  • Scanning-Tunneling Microscopy Observation of Monomethylsilane Adsorption on Si(111)-7×7, Japanese Journal of Applied Physics, 44 1419-1421, 2005.03

    M. Sakai, M. Suemitsu and Y. Narita

    Multiple Authorship (Including Foreigners)

  • Low-Temperature Heteroepitaxial Growth of SiC on (100)Si Using Hot-Mesh Chemical Vapor Deposition, Japanese Journal of Applied Physics, 44 1361-1364, 2005.03

    K. Yasui, J. Eto, Y. Narita, M. Takata and T. Akahane

    Multiple Authorship (Including Foreigners)

  • Ge-Dot Formation on Si(111) 7×7 Surface with C Predeposition Using Monomethylsilane, Japanese Journal of Applied Physics, 44 L123-L125, 2004.12

    Y. Narita, M. Sakai, T. Murata, T. Endoh and M. Suemitsu

    Multiple Authorship (Including Foreigners)

  • Si c(4×4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(001) using monomethylsilane and dimethylsilane, Applied Surface Science, 212-213 730-734, 2003.12

    Y. Narita, T. Inubushi, K. Yasui and T. Akahane

    Multiple Authorship (Including Foreigners)

  • Initial stage of 3C-SiC growth on Si(001)-2×1 surface using monomethylsilane, Applied Surface Science, 216 575-579, 2003.12

    Y. Narita, T. Inubushi, M. Harashima, K. Yasui and T. Akahane

    Multiple Authorship (Including Foreigners)

  • In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane, Journal of Crystal Growth, 237-239 1254-1259, 2002.12

    K. Yasui, Y. Narita, T. Inubushi and T. Akahane

    Multiple Authorship (Including Foreigners)

  • ジメチルシランを用いたSi表面でのSiC成長初期過程, 表面科学, 22 566-572, 2001.12

    成田克、安井寛治、赤羽正志

    Multiple Authorship (Including Foreigners)

  • Gate voltage-dependent Aharanov–Bohm experiment in the presence of Rashba spin–orbit interaction, Physica E, 6 318-321, 2000.12

    J. Nitta, F. Meijer, Y. Narita, H. Takayanagi

    Multiple Authorship (Including Foreigners)

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Grant-in-Aid for Scientific Research

  • Grant-in-Aid for challenging Exploratory Research,2013.04 - 2015.03

  • Grant-in-Aid for Scientific Research(C),2009.04 - 2010.03

  • Grant-in-Aid for Young Scientists(B),2007.04 - 2009.03

  • Grant-in-Aid for Specially Promoted Research,2006.04 - 2010.03

Presentations

  • The 27th European Conference on Surface Science, International presentation, 2010.08 - 2010.09, Poster presentation

 

Academic Activity

  • 応用物理学会, 2010.08 - 2011.09

  • 応用物理学会東北支部, 2013.10 - 2013.12

  • 応用物理学会, 2014.01 - 2016.03

  • 応用物理学会東北支部, 2014.01 -

  • 応用物理学会, 2015.09 - 2020.12

  • 応用物理学会強的秩序とその操作に関わる研究グループ, 2015.09 - 2020.12

  • 応用物理学会, 2016.11 - 2017.09

  • 応用物理学会, 2018.02 - 2020.01

  • 応用物理学会, 2021.01 - 2024.03

  • 応用物理学会東北支部, 2021.10 - 2021.12

  • 東北・半導体エレクトロニクスデザイン研究会, 2023.02 - 2024.03

  • 技術研究組合最先端半導体技術センター(LSTC), 2024.04 -

  • 東北・半導体エレクトロニクスデザインコンソーシアム(T-Seeds), 2024.04 -

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Academic Activities

  • 強的秩序とその操作に関わる第14回研究会,2022.01

  • 強的秩序とその操作に関わる第13回研究会夏の学校,2021.09

  • 強的秩序とその操作に関わる第12回研究会,2021.01

  • 強的秩序とその操作に関わる研究グループ 第11回研究会ー若手夏の学校ー,2020.09

  • 強的秩序とその操作に関わる研究グループ 第10回研究会,2020.01

  • 強的秩序とその操作に関わる研究グループ 第9回研究会ー若手夏の学校ー,2019.09

  • 強的秩序とその操作に関わる研究グループ 第8回研究会,2019.01

  • 強的秩序とその操作に関わる研究グループ 第7回研究会ー若手夏の学校ー,2018.09

  • 強的秩序とその操作に関わる研究グループ 第6回研究会,2018.01

  • 強的秩序とその操作に関わる研究グループ 第5回研究会,2017.09

  • 強的秩序とその操作に関わる研究グループ 第4回研究会,2017.01

  • 誘電体・磁性体 若手 夏の学校,2016.08

  • 強的秩序とその操作に関わる研究グループ 第1回研究会,2016.01

  • 第70回応用物理学会東北支部学術講演会,2015.12

  • 第69回応用物理学会東北支部学術講演会,2014.12

  • 2011年秋季 第72回応用物理学会学術講演会,2011.08 - 2011.09

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